Strain-Induced Change of Electronic Conductivity of Carbon Nanotubes
نویسندگان
چکیده
منابع مشابه
investigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولThermal conductivity of carbon nanotubes
As the size of electronic and mzechanical devices are decreased to the micron and nanometre level, it becomes particularly important to predict the thermal transport properties of the components. Using of molecular level theories such predictions are particularly important for modelling nano-electronic devices where scaling laws may change substantially but it is most difficult to accurately me...
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Combining equilibrium and nonequilibrium molecular dynamics simulations with accurate carbon potentials, we determine the thermal conductivity lambda of carbon nanotubes and its dependence on temperature. Our results suggest an unusually high value, lambda approximately 6600 W/m K, for an isolated (10,10) nanotube at room temperature, comparable to the thermal conductivity of a hypothetical iso...
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Aron Cummings,1,* Mohamed Osman,1,† Deepak Srivastava,2 and Madhu Menon3 1School of Electrical Engineering and Computer Science, Washington State University, Pullman, Washington 99164, USA 2NASA Ames Research Center, MST27A-1, Moffett Field, California 94035, USA 3Department of Physics and Astronomy and Center for Computational Sciences University of Kentucky, Lexington, Kentucky 40506, USA (Re...
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ژورنال
عنوان ژورنال: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A
سال: 2011
ISSN: 0387-5008,1884-8338
DOI: 10.1299/kikaia.77.769